- 专利标题: Deck-level shunting in a memory device
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申请号: US18084884申请日: 2022-12-20
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公开(公告)号: US11978493B2公开(公告)日: 2024-05-07
- 发明人: Daniele Vimercati
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Holland & Hart LLP
- 主分类号: G11C11/22
- IPC分类号: G11C11/22
摘要:
Methods, systems, and devices for deck-level shunting in a memory device are described. A memory device may include memory arrays arranged in a stack of decks over a substrate, and a combination of deck selection circuitry and shunting circuitry may be distributed among the decks to leverage common substrate-based circuitry, such as logic or addressing circuitry. For example, each memory array of a stack may include a set of digit lines and deck selection circuitry, such as deck selection transistors or other switching circuitry, operable to couple the set of digit lines with a column decoder that may be shared among multiple decks. Each memory array of a stack also may include shunting circuitry, such as shunting transistors or other switching circuitry operable to couple the set of digit lines with a plate node, thereby equalizing a voltage across the memory cells of the respective memory array.
公开/授权文献
- US20230186965A1 DECK-LEVEL SHUNTING IN A MEMORY DEVICE 公开/授权日:2023-06-15
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