- 专利标题： Transient voltage suppression device
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申请号： US17849824申请日： 2022-06-27
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公开(公告)号： US11978809B2公开(公告)日： 2024-05-07
- 发明人: Chih-Wei Chen , Kuan-Yu Lin , Kun-Hsien Lin
- 申请人： AMAZING MICROELECTRONIC CORP.
- 申请人地址： TW New Taipei
- 专利权人： AMAZING MICROELECTRONIC CORP.
- 当前专利权人： AMAZING MICROELECTRONIC CORP.
- 当前专利权人地址： TW New Taipei
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 主分类号： H01L29/87
- IPC分类号： H01L29/87 ; H01L29/06
摘要：
A transient voltage suppression device includes at least one P-type lightly-doped structure and at least one electrostatic discharge structure. The electrostatic discharge structure includes an N-type lightly-doped well, an N-type well, a first P-type heavily-doped area, and a first N-type heavily-doped area. The N-type lightly-doped well is formed in the P-type lightly-doped structure. The N-type well is formed in the N-type lightly-doped well. The doping concentration of the N-type lightly-doped well is less than that of the N-type well. The first P-type heavily-doped area is formed in the N-type well. The first N-type heavily-doped area is formed in the P-type lightly-doped structure.
公开/授权文献
- US20230420576A1 TRANSIENT VOLTAGE SUPPRESSION DEVICE 公开/授权日：2023-12-28
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