- 专利标题： Apparatus for preventing contamination of self-plasma chamber
-
申请号： US16646408申请日： 2018-08-07
-
公开(公告)号： US11990320B2公开(公告)日： 2024-05-21
- 发明人: Dong Ho Cha
- 申请人： NANOTECH INC.
- 申请人地址： KR Gyeonggi-do
- 专利权人： NANOTECH INC.
- 当前专利权人： NANOTECH INC.
- 当前专利权人地址： KR
- 代理机构： Mendelsohn Dunleavy, P.C.
- 优先权： KR 20170117900 2017.09.14
- 国际申请： PCT/KR2018/008999 2018.08.07
- 国际公布： WO2019/054635A 2019.03.21
- 进入国家日期： 2020-03-11
- 主分类号： H01J37/32
- IPC分类号： H01J37/32 ; C23C16/50
摘要：
The present invention relates to a technology for increasing the reliability of measurement by preventing the contamination of a self-plasma chamber provided in order to monitor a deposition operation performed in a process chamber, and has a shielding means capable of preventing an inflow of negative electrode material, which is generated by a sputtering phenomenon, into a discharge chamber when a positive charge of plasma, which is generated in the self-plasma chamber, collides with a negative electrode.
公开/授权文献
信息查询
