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公开(公告)号：US11990320B2
公开(公告)日：2024-05-21
申请号：US16646408
申请日：2018-08-07
Applicant: NANOTECH INC.
Inventor： Dong Ho Cha
CPC classification number: H01J37/32504 , C23C16/50 , H01J37/32183 , H01J37/32568 , H01J37/32651 , H01J37/32834 , H01J2237/022 , H01J2237/026 , H01J2237/332
Abstract: The present invention relates to a technology for increasing the reliability of measurement by preventing the contamination of a self-plasma chamber provided in order to monitor a deposition operation performed in a process chamber, and has a shielding means capable of preventing an inflow of negative electrode material, which is generated by a sputtering phenomenon, into a discharge chamber when a positive charge of plasma, which is generated in the self-plasma chamber, collides with a negative electrode.
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公开(公告)号：US20200273676A1
公开(公告)日：2020-08-27
申请号：US16646408
申请日：2018-08-07
Applicant: NANOTECH INC.
Inventor： Dong Ho Cha
Abstract: The present invention relates to a technology for increasing the reliability of measurement by preventing the contamination of a self-plasma chamber provided in order to monitor a deposition operation performed in a process chamber, and has a shielding means capable of preventing an inflow of negative electrode material, which is generated by a sputtering phenomenon, into a discharge chamber when a positive charge of plasma, which is generated in the self-plasma chamber, collides with a negative electrode.
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