- 专利标题: Method for reducing thermal stress of a power semiconductor switch, an electrical converter unit and an elevator
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申请号: US17672150申请日: 2022-02-15
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公开(公告)号: US11993479B2公开(公告)日: 2024-05-28
- 发明人: Mikko Paakkinen , Lauri Stolt , Tuukka Kauppinen
- 申请人: KONE Corporation
- 申请人地址: FI Helsinki
- 专利权人: KONE Corporation
- 当前专利权人: KONE Corporation
- 当前专利权人地址: FI Helsinki
- 代理机构: Birch, Stewart, Kolasch & Birch, LLP
- 主分类号: H02K11/00
- IPC分类号: H02K11/00 ; B66B1/28 ; B66B1/30 ; H02H3/04 ; H02H7/08 ; H02P6/08
摘要:
An electrical converter unit and a method for reducing thermal stress of a power semiconductor switch, such as an IGBT, of an electrical converter unit, the electrical converter unit comprising at least a gate control circuit wherein the electrical converter unit controls an electrical motor. The method comprises determining load and estimating required motor current based on the determined load and/or a predetermined speed profile. The electrical converter unit has at least a first operating state and a second operating state. The second operating state is used if predetermined criteria is fulfilled, the predetermined criteria relating to at least one of the following: estimated required current, measured motor speed, temperature of the power semiconductor switch and/or electrical converter unit, temperature model of the power semiconductor switch and/or electrical converter unit. In the second operating state a lower switching frequency of the power semiconductor switch is used than in the first operating state, and in the second operating state a higher switching speed of the power semiconductor switch is used than in the first operating state.
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