Invention Grant
- Patent Title: High selectivity atomic layer deposition process
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Application No.: US16809318Application Date: 2020-03-04
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Publication No.: US11993845B2Publication Date: 2024-05-28
- Inventor: Jong Choi , Christopher Ahles , Andrew C. Kummel , Keith Tatseun Wong , Srinivas D. Nemani
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/40 ; C23C16/458 ; H01L21/02 ; H01L21/285
Abstract:
Methods for depositing a metal containing material formed on a certain material of a substrate using an atomic layer deposition process for semiconductor applications are provided. In one embodiment, a method of forming a metal containing material on a substrate comprises pulsing a first gas precursor comprising a metal containing precursor to a surface of a substrate, pulsing a second gas precursor comprising a silicon containing precursor to the surface of the substrate, forming a metal containing material selectively on a first material of the substrate, and thermal annealing the metal containing material formed on the substrate.
Public/Granted literature
- US20200283898A1 HIGH SELECTIVITY ATOMIC LAYER DEPOSITION PROCESS Public/Granted day:2020-09-10
Information query
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