- 专利标题: Integrated circuit chip including gate electrode with oblique cut surface, and manufacturing method of the same
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申请号: US17521080申请日: 2021-11-08
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公开(公告)号: US11996364B2公开(公告)日: 2024-05-28
- 发明人: Inyeal Lee , Dongbeen Kim , Jinwook Kim , Juhun Park , Deokhan Bae , Junghoon Seo , Myungyoon Um
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR 20210049825 2021.04.16
- 主分类号: H01L23/535
- IPC分类号: H01L23/535 ; H01L23/00 ; H01L23/522 ; H01L27/092 ; H01L29/06 ; H01L29/417 ; H01L29/423 ; H01L29/78 ; H01L29/786
摘要:
A circuit chip including a substrate, first and second channel active regions on the substrate, and extending in a first direction, the second channel active regions spaced apart from the first channel regions in a second direction intersecting the first direction, first and second gate electrodes intersecting the second channel active regions, third and fourth gate electrodes intersecting the first channel active regions, and a contact electrode between the first, second, third, and fourth gate electrodes. The contact electrode including a stem section in a vertical direction, and first and second branch sections extending from the stem section and contacting a respective source/drain region on the first and second channel active regions, the first gate electrode and the third gate electrode overlapping in the second direction, and including edge portions having widths decreasing as the first gate electrode and the third gate electrode extend toward facing ends thereof.
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