- Patent Title: Sputtering apparatus and method of controlling sputtering apparatus
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Application No.: US17556025Application Date: 2021-12-20
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Publication No.: US12002667B2Publication Date: 2024-06-04
- Inventor: Masato Shinada , Tetsuya Miyashita , Einstein Noel Abarra
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Fenwick & West LLP
- Priority: JP 20215671 2020.12.24
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/34 ; C23C14/50 ; C23C14/54 ; H01J37/32

Abstract:
There is provided a sputtering apparatus comprising: a target from which sputtered particles are emitted; a substrate support configured to support a substrate; a substrate moving mechanism configured to move the substrate in one direction; and a shielding member disposed between the target and the substrate support and having an opening through which the sputtered particles pass. The shielding member includes a first shielding member and a second shielding member disposed in a vertical direction.
Public/Granted literature
- US20220208534A1 SPUTTERING APPARATUS AND METHOD OF CONTROLLING SPUTTERING APPARATUS Public/Granted day:2022-06-30
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