- 专利标题: Semiconductor device
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申请号: US17688482申请日: 2022-03-07
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公开(公告)号: US12003236B2公开(公告)日: 2024-06-04
- 发明人: Ryuji Takahashi , Kazuya Matsuzawa
- 申请人: Kioxia Corporation
- 申请人地址: JP Tokyo
- 专利权人: Kioxia Corporation
- 当前专利权人: Kioxia Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Foley & Lardner LLP
- 优先权: JP 21149530 2021.09.14
- 主分类号: H03K19/003
- IPC分类号: H03K19/003 ; H03K19/0185
摘要:
A semiconductor device includes: an electronic circuit to receive a first signal and transmit a second signal; a power supply circuit to supply a power supply voltage to the electronic circuit; and a correction circuit to change a value of the power supply voltage to switch between a normal and a refresh operation mode. The electronic circuit includes: a first Pch transistor in which a potential of a first gate changes according to the first signal, and a potential of one of the first source and drain changes in response to the power supply voltage; and a first Nch transistor in which the second gate is electrically connected to the first gate, a potential of one of the second source and drain is equal to or lower than a ground potential, and another of the second source and drain is electrically connected to another of the first source and drain.
公开/授权文献
- US20230080416A1 SEMICONDUCTOR DEVICE 公开/授权日:2023-03-16
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