Invention Grant
- Patent Title: Phase-change memory
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Application No.: US17507645Application Date: 2021-10-21
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Publication No.: US12004432B2Publication Date: 2024-06-04
- Inventor: Philippe Boivin , Roberto Simola , Yohann Moustapha-Rabault
- Applicant: STMicroelectronics (Crolles 2) SAS , STMICROELECTRONICS (ROUSSET) SAS
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS,STMICROELECTRONICS (ROUSSET) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS,STMICROELECTRONICS (ROUSSET) SAS
- Current Assignee Address: FR Crolles; FR Rousset
- Agency: Seed IP Law Group LLP
- Priority: FR 11087 2020.10.29
- Main IPC: H10N70/00
- IPC: H10N70/00 ; H10B63/00 ; H10N70/20
Abstract:
The present description concerns a device including phase-change memory cells, each memory cell including a first resistive element in lateral contact with a second element made of a phase-change material.
Public/Granted literature
- US20220140232A1 PHASE-CHANGE MEMORY Public/Granted day:2022-05-05
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