Invention Grant
- Patent Title: Semiconductor device having planar transistor and FinFET
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Application No.: US17740241Application Date: 2022-05-09
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Publication No.: US12009262B2Publication Date: 2024-06-11
- Inventor: Wei-Barn Chen , Ting-Huang Kuo , Shiu-Ko Jangjian , Chi-Cherng Jeng , Kuang-Yao Lo
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L21/265 ; H01L21/308 ; H01L21/8234 ; H01L27/088 ; H01L29/66
Abstract:
A device includes a FinFET on a first region of a substrate and a planar-FET on a second region of the substrate. The FinFET includes a FinFET source region, a FinFET drain region, and a FinFET gate between the FinFET source region and the FinFET drain region. The planar-FET includes a planar-FET source region, a planar-FET drain region, and a planar-FET gate between the planar-FET source region and the planar-FET drain region. A bottommost position of the FinFET source region is lower than a bottommost position of the planar-FET source region.
Public/Granted literature
- US20220262680A1 SEMICONDUCTOR DEVICE HAVING PLANAR TRANSISTOR AND FINFET Public/Granted day:2022-08-18
Information query
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