Invention Grant
- Patent Title: Semiconductor on insulator on wide band-gap semiconductor
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Application No.: US18161515Application Date: 2023-01-30
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Publication No.: US12009421B2Publication Date: 2024-06-11
- Inventor: Christopher Boguslaw Kocon
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Yudong Kim; Frank D. Cimino
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/267 ; H01L29/40 ; H01L29/66
Abstract:
A semiconductor device includes a first semiconductor structure. The first semiconductor structure includes a first semiconductor material having a band-gap. The first semiconductor structure has a first surface. An insulating layer has first and second opposing surfaces. The first surface of the insulating layer is on the first surface of the first semiconductor structure. A second semiconductor structure is on the second surface of the insulating layer and includes a second semiconductor material having a band-gap that is smaller than the band-gap of the first semiconductor material. A floating electrode couples the first semiconductor structure to the second semiconductor structure.
Public/Granted literature
- US20230178649A1 SEMICONDUCTOR ON INSULATOR ON WIDE BAND-GAP SEMICONDUCTOR Public/Granted day:2023-06-08
Information query
IPC分类:
