Invention Grant
- Patent Title: Plasma processing apparatus
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Application No.: US16958313Application Date: 2019-07-18
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Publication No.: US12014903B2Publication Date: 2024-06-18
- Inventor: Tetsuo Kawanabe , Motohiro Tanaka , Takahiro Sakuragi , Kohei Sato
- Applicant: Hitachi High-Tech Corporation
- Applicant Address: JP Tokyo
- Assignee: HITACHI HIGH-TECH CORPORATION
- Current Assignee: HITACHI HIGH-TECH CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge, P.C.
- International Application: PCT/JP2019/028262 2019.07.18
- International Announcement: WO2020/121581A 2020.06.18
- Date entered country: 2020-06-26
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
In a plasma processing apparatus including a plasma processing chamber disposed in a vacuum chamber, a sample stage disposed in the plasma processing chamber and on which a sample is placed, in the vacuum chamber, a second shower plate disposed above the sample stage, a first shower plate disposed above the second shower plate, and a dielectric window disposed above the first shower plate, first gas is supplied from a first gas supply unit to a space between the dielectric window and the first shower plate, and second gas is supplied from a second gas supply unit to a space between the first shower plate and the second shower plate.
Public/Granted literature
- US20220415618A1 PLASMA PROCESSING APPARATUS Public/Granted day:2022-12-29
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