公开(公告)号：US20220415618A1

公开(公告)日：2022-12-29

申请号：US16958313

申请日：2019-07-18

Applicant: Hitachi High-Tech Corporation

Inventor： Tetsuo Kawanabe ,  Motohiro Tanaka ,  Takahiro Sakuragi ,  Kohei Sato

IPC: H01J37/32

Abstract: In a plasma processing apparatus including a processing chamber disposed in a vacuum chamber, a sample stage disposed in the processing chamber and on which a sample is placed, in the vacuum chamber, a second shower plate disposed above the sample stage, a first shower plate disposed above the second shower plate, and a dielectric window disposed above the first shower plate, first gas is supplied from a first gas supply unit to a space between the dielectric window and the first shower plate, and second gas is supplied from a second gas supply unit to a space between the first shower plate and the second shower plate.

公开(公告)号：US12014903B2

公开(公告)日：2024-06-18

申请号：US16958313

申请日：2019-07-18

Applicant: Hitachi High-Tech Corporation

Inventor： Tetsuo Kawanabe ,  Motohiro Tanaka ,  Takahiro Sakuragi ,  Kohei Sato

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32082 ,  H01J37/32678 ,  H01J2237/3343

Abstract: In a plasma processing apparatus including a plasma processing chamber disposed in a vacuum chamber, a sample stage disposed in the plasma processing chamber and on which a sample is placed, in the vacuum chamber, a second shower plate disposed above the sample stage, a first shower plate disposed above the second shower plate, and a dielectric window disposed above the first shower plate, first gas is supplied from a first gas supply unit to a space between the dielectric window and the first shower plate, and second gas is supplied from a second gas supply unit to a space between the first shower plate and the second shower plate.