Invention Grant
- Patent Title: Body bias voltage generator and semiconductor device including the same preliminary class
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Application No.: US18060244Application Date: 2022-11-30
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Publication No.: US12015024B2Publication Date: 2024-06-18
- Inventor: Youngjae Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20220038639 2022.03.29
- Main IPC: H02M3/07
- IPC: H02M3/07 ; G05F3/20 ; G05F3/26 ; H01L27/02 ; H01L27/092 ; H10B12/00

Abstract:
A body bias voltage generating circuit includes a current mirror circuit configured to generate and input a target current to a target semiconductor element, the target semiconductor element configured to be set to a turned-on state; and a charge pump circuit including an oscillator configured to output a clock signal based on a result of comparing an output voltage of the target semiconductor element with a reference voltage, and at least one charge pump outputting a body bias voltage to each of a plurality of semiconductor elements, wherein each of the plurality of semiconductor elements is the same as or is the same type as the target semiconductor element.
Public/Granted literature
- US20230317710A1 BODY BIAS VOLTAGE GENERATOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME Public/Granted day:2023-10-05
Information query
IPC分类: