- 专利标题: Semiconductor device with daisy-chained delay cells and method of forming same
-
申请号: US17822559申请日: 2022-08-26
-
公开(公告)号: US12015410B2公开(公告)日: 2024-06-18
- 发明人: Huaixin Xian , Longbiao Lei , Sinpei Goa , Zhang-Ying Yan , Qingchao Meng , Jerry Chang Jui Kao
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. , TSMC NANJING COMPANY, LIMITED
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,TSMC NANJING COMPANY, LIMITED
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,TSMC NANJING COMPANY, LIMITED
- 当前专利权人地址: TW Hsinchu; CN Nanjing
- 代理机构: Hauptman Ham, LLP
- 优先权: CN 2222144042.5 2022.08.15
- 主分类号: H03K3/00
- IPC分类号: H03K3/00 ; H03K3/037 ; H03K3/356 ; H03K3/86
摘要:
A semiconductor device includes a first dummy group having a first set of dummy transistors; a first delay cell having a first set of active transistors; a second delay cell having a second set of active transistors; a second dummy group having a second set of dummy transistors; and relative to a first direction the first and second dummy groups and the first and second delay cells being arranged in a first sequence arranged as the first dummy group, the first delay cell, the second delay cell, and the second dummy group; and the first and second delay cells being free from having another dummy group therebetween.
公开/授权文献
信息查询