Invention Grant
- Patent Title: Photodetection device, semiconductor photodetection element, and method for driving semiconductor photodetection element
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Application No.: US17258947Application Date: 2019-06-06
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Publication No.: US12021100B2Publication Date: 2024-06-25
- Inventor: Shinya Iwashina , Shunsuke Adachi , Shigeyuki Nakamura , Terumasa Nagano , Ryutaro Tsuchiya
- Applicant: HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Hamamatsu
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu
- Agency: Faegre Drinker Biddle & Reath LLP
- Priority: JP 18135253 2018.07.18
- International Application: PCT/JP2019/022609 2019.06.06
- International Announcement: WO2020/017180A 2020.01.23
- Date entered country: 2021-01-08
- Main IPC: H04N25/766
- IPC: H04N25/766 ; G01S7/497 ; G01S17/89 ; H01L27/146 ; H01L31/107

Abstract:
Each of a plurality of cells includes at least one avalanche photodiode. A light projecting unit is arranged to project light having a cross-sectional shape whose longitudinal direction corresponds to a first direction. The light projecting unit is arranged to scan the light along a second direction intersecting the first direction such that the reflected light is incident on, among N cell groups each of which includes M cells aligned in a row direction, each cell group or each plurality of cell groups. A controller is arranged to apply, in accordance with the incidence of the reflected light, a bias voltage that makes the avalanche photodiode operate in a Geiger mode to each cell group or each plurality of cell groups, and is arranged to read signals from cells included in the cell group or the plurality of cell groups to which the bias voltage has been applied.
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