Invention Grant
- Patent Title: Self-biasing shunt switch with bootstrapping
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Application No.: US18301184Application Date: 2023-04-14
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Publication No.: US12028058B2Publication Date: 2024-07-02
- Inventor: Amitoj Singh , Tienyu Chang , Siu-Chuang Ivan Lu
- Applicant: Samsung Electronics Co., Ltd.
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Yongin-si
- Agency: Lewis Roca Rothgerber Christie LLP
- Main IPC: H03K17/56
- IPC: H03K17/56 ; H03F3/24 ; H04B1/04

Abstract:
A shunt switch. In some embodiments, the shunt switch includes a transistor stack including a first transistor and a capacitor. The transistor stack may have a first end terminal and a second end terminal, the first transistor being connected to the first end terminal, the first end terminal being connected to a switching terminal of the shunt switch. The capacitor may have a first terminal connected to the second end terminal of the transistor stack, and a second terminal connected to a low-impedance node.
Public/Granted literature
- US20230261651A1 SELF-BIASING SHUNT SWITCH WITH BOOTSTRAPPING Public/Granted day:2023-08-17
Information query
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