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公开(公告)号：US20220399864A1
公开(公告)日：2022-12-15
申请号：US17746856
申请日：2022-05-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Omar Abdulmonem Mohamed Elsayed , Venumadhav Bhagavatula , Tienyu Chang , Siu-Chuang Ivan Lu , Sangwon Son
Abstract: A variable gain amplifier includes a first transconductor circuit coupled to a first input terminal, a first output terminal, and a second output terminal of the variable gain amplifier, the first transconductor circuit including: a plurality of positive coefficient transistors coupled to the first output terminal and configured to selectively conduct current in response to a first binary code, a plurality of negative coefficient transistors coupled to the second output terminal and configured to selectively conduct current in response to a second binary code, and a plurality of amplifying transistors, each having a gate electrode coupled to the first input terminal, a first electrode coupled to a ground reference, and a second electrode coupled to a pair of coefficient transistors including one of the plurality of positive coefficient transistors and one of the plurality of negative coefficient transistors.
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公开(公告)号：US12224893B2
公开(公告)日：2025-02-11
申请号：US18209473
申请日：2023-06-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Elina Nayebi , Pranav Dayal , Kee-Bong Song , Siu-Chuang Ivan Lu , Sang Won Son
IPC: H04L27/36 , H04L27/148 , H04L27/20 , H04L27/26 , H04L27/38
Abstract: A method of compensating for IQ mismatch (IQMM) in a transceiver may include sending first and second signals from a transmit path through a loopback path, using a phase shifter to introduce a phase shift in at least one of the first and second signals, to obtain first and second signals received by a receive path, using the first and second signals received by the receive path to obtain joint estimates of transmit and receive IQMM, at least in part, by estimating the phase shift, and compensating for IQMM using the estimates of IQMM. Using the first and second signals received by the receive path to obtain estimates of the IQMM may include processing the first and second signals received by the receive path as a function of one or more frequency-dependent IQMM parameters.
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公开(公告)号：US11799504B2
公开(公告)日：2023-10-24
申请号：US17585480
申请日：2022-01-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Amitoj Singh , Ajaypat Jain , Xiaohua Yu , Tienyu Chang , Siu-Chuang Ivan Lu , Sang Won Son
CPC classification number: H04B1/006 , H03D7/1425 , H04B1/123 , H04B1/44
Abstract: A band-switching network includes a dual-band balun and a switch network. The dual-band balun includes a first output and a second output. The switch network includes a first switch and a second switch in which an input to the first switch is coupled to the first output and an input to the second switch is coupled to the second balanced output. The dual-band balun further includes a primary coil, a first secondary coil and a second secondary coil in which the first secondary coil is coupled to the first balanced output and the second secondary coil is coupled to the second balanced output. In one embodiment, the primary coil and the first secondary coil are coupled by a first coupling factor k1, and the primary coil and the second secondary coil are coupled by a second coupling factor k2 that is different from the first coupling factor k1.
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公开(公告)号：US11641202B2
公开(公告)日：2023-05-02
申请号：US16987335
申请日：2020-08-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Amitoj Singh , Tienyu Chang , Siu-Chuang Ivan Lu
Abstract: A shunt switch. In some embodiments, the shunt switch includes a transistor stack including a first transistor and a capacitor. The transistor stack may have a first end terminal and a second end terminal, the first transistor being connected to the first end terminal, the first end terminal being connected to a switching terminal of the shunt switch. The capacitor may have a first terminal connected to the second end terminal of the transistor stack, and a second terminal connected to a low-impedance node.
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公开(公告)号：US11916641B2
公开(公告)日：2024-02-27
申请号：US17695460
申请日：2022-03-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Xiaohua Yu , Wei-Hsuan Sharon Kung , Siu-Chuang Ivan Lu , Sangwon Son
CPC classification number: H04B7/10 , H04B1/38 , H04B1/50 , H04B17/101
Abstract: A communication device, including a plurality of transceiver modules; a storage configured to store calibration information; and at least one processor configured to: generate a first dual-polarized RF signal by controlling a first transceiver module to generate a first RF signal based on the calibration information; measure, by a second transceiver module, a first signal power of the first dual-polarized RF signal; adjust a parameter of the first transceiver module, and generate a second dual-polarized RF signal by controlling the first transceiver module to generate a second RF signal based on the adjusted parameter; measure, by the second transceiver module, a second signal power of the second dual-polarized RF signal; and generate an aligned dual-polarized RF signal by controlling the plurality of transceiver modules to generate a plurality of RF signals based on a result of a comparison between the first signal power and the second signal power.
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Patent Agency Ranking
公开(公告)号：US20220085763A1
公开(公告)日：2022-03-17
申请号：US17532340
申请日：2021-11-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ajaypat Jain , Amitoj Singh , Xiaohua Yu , Tienyu Chang , Siu-Chuang Ivan Lu , Sang Won Son
Abstract: An electronic circuit and method are provided. The electronic circuit includes an amplifier including first cascode branch and a second cascode branch, the amplifier being configured to receive a differential input and control signals, control gate voltages in the first cascode branch and gate voltages in the second cascode branch, generate a first output signal with the first cascode branch, and generate a second output signal with the second cascode branch, and a coupler configured to perform a summation of the first output signal and the second output signal, and generate a final phase shifted output, wherein the first cascode branch or the second cascode branch includes a first cascode arm and a second cascode arm.
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公开(公告)号：US20220060155A1
公开(公告)日：2022-02-24
申请号：US17111337
申请日：2020-12-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Che-Chun Kuo , Siu-Chuang Ivan Lu , Sang Won Son , Xiaohua Yu
Abstract: A wide band matching network for power amplifier impedance matching, the wide band matching network comprising: a power amplifier transistor connected to an output network; the output network including: a series capacitor; an on-chip transformer connected to the capacitor in series, wherein the transformer and the capacitor act as a second order filter; and a port connected to the capacitor and a receiver switch.
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公开(公告)号：US11245426B2
公开(公告)日：2022-02-08
申请号：US16987390
申请日：2020-08-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Amitoj Singh , Ajaypat Jain , Xiaohua Yu , Tienyu Chang , Siu-Chuang Ivan Lu , Sang Won Son
Abstract: A band-switching network includes a dual-band balun and a switch network. The dual-band balun includes a first output and a second output. The switch network includes a first switch and a second switch in which an input to the first switch is coupled to the first output and an input to the second switch is coupled to the second balanced output. The dual-band balun further includes a primary coil, a first secondary coil and a second secondary coil in which the first secondary coil is coupled to the first balanced output and the second secondary coil is coupled to the second balanced output. In one embodiment, the primary coil and the first secondary coil are coupled by a first coupling factor k1, and the primary coil and the second secondary coil are coupled by a second coupling factor k2 that is different from the first coupling factor k1.
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公开(公告)号：US20210384899A1
公开(公告)日：2021-12-09
申请号：US16987335
申请日：2020-08-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Amitoj Singh , Tienyu Chang , Siu-Chuang Ivan Lu
Abstract: A shunt switch. In some embodiments, the shunt switch includes a transistor stack including a first transistor and a capacitor. The transistor stack may have a first end terminal and a second end terminal, the first transistor being connected to the first end terminal, the first end terminal being connected to a switching terminal of the shunt switch. The capacitor may have a first terminal connected to the second end terminal of the transistor stack, and a second terminal connected to a low-impedance node.
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公开(公告)号：US12074575B2
公开(公告)日：2024-08-27
申请号：US17746856
申请日：2022-05-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Omar Abdulmonem Mohamed Elsayed , Venumadhav Bhagavatula , Tienyu Chang , Siu-Chuang Ivan Lu , Sangwon Son
CPC classification number: H03G3/30 , H03F3/45475 , H03K5/01 , H03G2201/103 , H03K2005/00286
Abstract: A variable gain amplifier includes a first transconductor circuit coupled to a first input terminal, a first output terminal, and a second output terminal of the variable gain amplifier, the first transconductor circuit including: a plurality of positive coefficient transistors coupled to the first output terminal and configured to selectively conduct current in response to a first binary code, a plurality of negative coefficient transistors coupled to the second output terminal and configured to selectively conduct current in response to a second binary code, and a plurality of amplifying transistors, each having a gate electrode coupled to the first input terminal, a first electrode coupled to a ground reference, and a second electrode coupled to a pair of coefficient transistors including one of the plurality of positive coefficient transistors and one of the plurality of negative coefficient transistors.
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