- 专利标题: Self-biasing shunt switch with bootstrapping
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申请号: US18301184申请日: 2023-04-14
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公开(公告)号: US12028058B2公开(公告)日: 2024-07-02
- 发明人: Amitoj Singh , Tienyu Chang , Siu-Chuang Ivan Lu
- 申请人: Samsung Electronics Co., Ltd.
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Yongin-si
- 代理机构: Lewis Roca Rothgerber Christie LLP
- 主分类号: H03K17/56
- IPC分类号: H03K17/56 ; H03F3/24 ; H04B1/04
摘要:
A shunt switch. In some embodiments, the shunt switch includes a transistor stack including a first transistor and a capacitor. The transistor stack may have a first end terminal and a second end terminal, the first transistor being connected to the first end terminal, the first end terminal being connected to a switching terminal of the shunt switch. The capacitor may have a first terminal connected to the second end terminal of the transistor stack, and a second terminal connected to a low-impedance node.
公开/授权文献
- US20230261651A1 SELF-BIASING SHUNT SWITCH WITH BOOTSTRAPPING 公开/授权日:2023-08-17
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