- 专利标题： Integrated circuit and method of forming the same
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申请号： US18363230申请日： 2023-08-01
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公开(公告)号： US12033998B2公开(公告)日： 2024-07-09
- 发明人: Kuang-Ching Chang , Jung-Chan Yang , Hui-Zhong Zhuang , Chih-Liang Chen , Kuo-Nan Yang
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Hauptman Ham, LLP
- 主分类号： H01L27/02
- IPC分类号： H01L27/02 ; G06F1/3287
摘要：
An integrated circuit includes a gated circuit configured to operate on at least a first or a second voltage, a header circuit coupled to the gated circuit, a first and second power rail on a back-side of a wafer, and a third power rail on a front-side of the wafer. The header circuit is configured to supply the first voltage to the gated circuit by the first power rail. The first power rail includes a first portion, a second portion and a third portion, the third portion being between the first portion and the second portion. The second power rail is configured to supply the second voltage to the gated circuit, and is between the first portion and the second portion. The third power rail includes a first set of conductors. Each of the first set of conductors being configured to supply a third voltage to the header circuit.
公开/授权文献
- US20230411378A1 INTEGRATED CIRCUIT AND METHOD OF FORMING THE SAME 公开/授权日：2023-12-21
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