- 专利标题: Backside illuminated image sensor and method of manufacturing the same
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申请号: US17461047申请日: 2021-08-30
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公开(公告)号: US12034030B2公开(公告)日: 2024-07-09
- 发明人: Chang Hun Han
- 申请人: DB HITEK CO., LTD.
- 申请人地址: KR Seoul
- 专利权人: DB HITEK CO., LTD.
- 当前专利权人: DB HITEK CO., LTD.
- 当前专利权人地址: KR Seoul
- 代理机构: Husch Blackwell LLP
- 优先权: KR 20200109974 2020.08.31
- 主分类号: H01L27/146
- IPC分类号: H01L27/146
摘要:
A backside illuminated image sensor and a method of manufacturing the same are disclosed. The backside illuminated image sensor includes a substrate having a frontside surface and a backside surface, pixel regions disposed in the substrate, an insulating layer disposed on the frontside surface of the substrate, a bonding pad disposed on a frontside surface of the insulating layer, a second bonding pad connected to a backside surface of the bonding pad through the substrate and the insulating layer and exposed through the backside surface of the substrate, and a test pad connected to the backside surface of the bonding pad through the substrate and the insulating layer, exposed through the backside surface of the substrate, and for testing whether the second bonding pad is normally connected to the backside surface of the bonding pad.
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