公开(公告)号：US20240332375A1

公开(公告)日：2024-10-03

申请号：US18332795

申请日：2023-06-12

申请人： DB HiTek Co., Ltd.

发明人： Jong Ho LEE

IPC分类号： H01L29/40 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/402 ,  H01L28/20 ,  H01L29/0607 ,  H01L29/66681 ,  H01L29/7816

摘要： Disclosed are a high voltage semiconductor device and a method of manufacturing the same. More particularly, a high voltage semiconductor device and a method of manufacturing the same include a metal field plate, which may be manufactured substantially simultaneously with a thin film resistor (TFR) (e.g., in the same process step[s] or sequence), between a source metal and a gate electrode to improve peak electric field dispersion and breakdown voltage characteristics.

公开(公告)号：US20240312829A1

公开(公告)日：2024-09-19

申请号：US18183375

申请日：2023-03-14

申请人： DB HiTek Co., Ltd.

发明人： Sang Il HWANG ,  Dae Il kim ,  Sung Hoon LEE ,  Young Joon CHOI

IPC分类号： H01L21/762 ,  H01L21/02 ,  H01L21/3213 ,  H01L29/10

CPC分类号： H01L21/76229 ,  H01L21/02112 ,  H01L21/3213 ,  H01L29/1095

摘要： Disclosed are a semiconductor device and a method of manufacturing the same. More particularly, a semiconductor device and a method of manufacturing the same are disclosed, including a device isolation structure with a pre-DTI structure and/or a DTI structure having at least one corner region with a cut shape/corner or truncation in a plan view, thereby reducing or preventing the occurrence of defects during formation of the device isolation structure and in a subsequent CMP process.

公开(公告)号：US20240250168A1

公开(公告)日：2024-07-25

申请号：US18311102

申请日：2023-05-02

申请人： DB HiTek Co., Ltd.

发明人： Jong Min KIM ,  Geum Ho AHN

IPC分类号： H01L29/78 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66

CPC分类号： H01L29/7816 ,  H01L29/404 ,  H01L29/42324 ,  H01L29/66681

摘要： Disclosed is a high voltage semiconductor device and a method of manufacturing the same and, more particularly, a high voltage semiconductor device and a method of manufacturing the same enabling more effective integration through improvement of breakdown voltage (BV) characteristics during device turn-on and/or turn-off and consequent improvement of specific on-resistance (Rsp) characteristics by forming or including a floating gate and/or a connection structure on a substrate, between a gate electrode and a drain.

公开(公告)号：US20240234510A9

公开(公告)日：2024-07-11

申请号：US18304414

申请日：2023-04-21

申请人： DB HiTek Co., Ltd.

发明人： Hee Bae LEE ,  Jae Yuhn MOON ,  Seung Hyun KIM

IPC分类号： H01L29/16 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/1608 ,  H01L29/0696 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/66734 ,  H01L29/7813

摘要： Disclosed are a SiC MOSFET power semiconductor device and a method of manufacturing the same. More particularly, a SiC MOSFET power semiconductor device and a method of manufacturing the same are disclosed, including a trench gate having a hexagonal shape in a plan or layout view, to improve on-resistance (Rsp) characteristics and increase channel density.

公开(公告)号：US12034030B2

公开(公告)日：2024-07-09

申请号：US17461047

申请日：2021-08-30

申请人： DB HITEK CO., LTD.

发明人： Chang Hun Han

IPC分类号： H01L27/146

CPC分类号： H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14685

摘要： A backside illuminated image sensor and a method of manufacturing the same are disclosed. The backside illuminated image sensor includes a substrate having a frontside surface and a backside surface, pixel regions disposed in the substrate, an insulating layer disposed on the frontside surface of the substrate, a bonding pad disposed on a frontside surface of the insulating layer, a second bonding pad connected to a backside surface of the bonding pad through the substrate and the insulating layer and exposed through the backside surface of the substrate, and a test pad connected to the backside surface of the bonding pad through the substrate and the insulating layer, exposed through the backside surface of the substrate, and for testing whether the second bonding pad is normally connected to the backside surface of the bonding pad.

公开(公告)号：US20240222412A1

公开(公告)日：2024-07-04

申请号：US18137358

申请日：2023-04-20

申请人： DB HITEK CO., LTD.

发明人： Chang Hun HAN ,  Man Lyun HA ,  Tae Wook KANG

IPC分类号： H01L27/146

CPC分类号： H01L27/1464 ,  H01L27/14623 ,  H01L27/14636

摘要： A backside illuminated image sensor includes a substrate having a frontside surface and a backside surface, pixel regions formed in the substrate, light isolation patterns formed among the pixel regions, first bonding pads electrically connected to the pixel regions, and at least one second bonding pad electrically connected to the light isolation patterns.

公开(公告)号：US20240120958A1

公开(公告)日：2024-04-11

申请号：US18186728

申请日：2023-03-20

申请人： DB HiTek Co., Ltd.

发明人： Ja Geon KOO

IPC分类号： H04B1/10

CPC分类号： H04B1/1027 ,  H04B1/1018

摘要： A blocker signal removal device suitable for a receiver input unit, and a method of using the same are proposed. The blocker signal removal device effectively removes blocker signals in reception signals for the receiver. The blocker signal removal device includes a balun low-noise amplifier having a single input and differential output and a filter circuit coupled to the balun low-noise amplifier and configured to remove only an in-band signal of the reception signals. According to such a configuration, signals of the balun low-noise amplifier and signals of the filter circuit cancel out each other, so that unwanted out-of-band signals are removed from the reception signals, and only the in-band signal remains.

公开(公告)号：US20240120418A1

公开(公告)日：2024-04-11

申请号：US18191296

申请日：2023-03-28

申请人： DB HiTek Co., Ltd.

发明人： Sang II HWANG

IPC分类号： H01L29/78 ,  H01L21/761 ,  H01L29/66

CPC分类号： H01L29/7816 ,  H01L21/761 ,  H01L29/66681

摘要： Disclosed is an LDMOS semiconductor device and a method of manufacturing the same and, more particularly, to an LDMOS semiconductor device and a method of manufacturing the same seeking to maintain a high breakdown voltage while reducing the chip size through non-formation or size minimization of an extension region, and thus improving the degree of integration, by forming or including a deep trench isolation (DTI) region along the width or similar lateral direction of the LDMOS semiconductor device, on a longitudinal boundary of a core region.

公开(公告)号：US20240120361A1

公开(公告)日：2024-04-11

申请号：US18187143

申请日：2023-03-21

申请人： DB HiTek Co., Ltd.

发明人： Sang Won YUN ,  Ju Hwan JUNG ,  Man Lyun HA

IPC分类号： H01L27/146

CPC分类号： H01L27/14629 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

摘要： Disclosed are a frontside illuminated image sensor and a method of manufacturing the same. More particularly, a frontside illuminated image sensor and a method of manufacturing the frontside illuminated image sensor include a light scattering portion in a substrate, configured to increase a path of incident light, thereby preventing cross-talk between adjacent pixels and increasing light sensitivity.

公开(公告)号：US11901869B2

公开(公告)日：2024-02-13

申请号：US17675144

申请日：2022-02-18

申请人： DB HiTek Co., Ltd.

发明人： Mun Gyu Kim ,  Yong In Park

IPC分类号： H03F3/45 ,  H03F1/52

CPC分类号： H03F3/45183 ,  H03F1/523 ,  H03F2203/45248

摘要： Disclosed is an amplifier capable of minimizing shortcircuit current of an output stage of a buffer upon transition of an output voltage while having a high slew rate without increasing power consumption. The amplifier includes an input unit, a conversion unit, an amplification unit, a frequency compensation circuit, and a short-circuit current minimization circuit. Alternatively, the amplifier includes an input unit, a conversion unit, an amplification unit, a frequency compensation circuit, a short-circuit current minimization circuit, and a slew rate improvement circuit.