Invention Grant
- Patent Title: Method for manufacturing capacitor structure
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Application No.: US18119043Application Date: 2023-03-08
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Publication No.: US12034038B2Publication Date: 2024-07-09
- Inventor: Teng-Chuan Hu , Chu-Fu Lin , Chun-Hung Chen
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsinchu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C
- The original application number of the division: US17136075 2020.12.29
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L49/02
Abstract:
A method for manufacturing a capacitor structure is provided. A substrate having a first side and a second side opposite to the first side is provided. A plurality of first trenches are formed on the first side. A first capacitor is formed extending along the first side and into the first trenches. A plurality of second trenches are formed on the second side. A second capacitor is formed extending along the second side and into the second trenches.
Public/Granted literature
- US20230223431A1 METHOD FOR MANUFACTURING CAPACITOR STRUCTURE Public/Granted day:2023-07-13
Information query
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