- 专利标题: Superlattice structure including two-dimensional material and device including the superlattice structure
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申请号: US18052017申请日: 2022-11-02
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公开(公告)号: US12034049B2公开(公告)日: 2024-07-09
- 发明人: Minhyun Lee , Jiwoong Park , Saien Xie , Jinseong Heo , Hyeonjin Shin
- 申请人: Samsung Electronics Co., Ltd. , THE UNIVERSITY OF CHICAGO , Center for Technology Licensing at Cornell University
- 申请人地址: KR IL Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.,The University of Chicago,Center for Technology Licensing at Cornell University
- 当前专利权人: Samsung Electronics Co., Ltd.,The University of Chicago,Center for Technology Licensing at Cornell University
- 当前专利权人地址: KR Gyeonggi-do; US IL Chicago; US NY Ithaca
- 代理机构: HARNESS, DICKEY & PIERCE, P.L.C.
- 主分类号: H01L29/15
- IPC分类号: H01L29/15 ; H01L29/10
摘要:
Provided are a superlattice structure including a two-dimensional material and a device including the superlattice structure. The superlattice structure may include at least two different two-dimensional (2D) materials bonded to each other in a lateral direction, and an interfacial region of the at least two 2D materials may be strained. The superlattice structure may have a bandgap adjusted by the interfacial region that is strained. The at least two 2D materials may include first and second 2D materials. The first 2D material may have a first bandgap in an intrinsic state thereof. The second 2D material may have a second bandgap in an intrinsic state thereof. An interfacial region of the first and second 2D materials and an adjacent region may have a third bandgap between the first bandgap and the second bandgap.
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