- 专利标题： Sulfur-doped silicon negative electrode material, method for producing same, lithium secondary battery negative electrode including negative electrode material, and lithium secondary battery comprising negative electrode
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申请号： US17285316申请日： 2020-03-06
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公开(公告)号： US12034157B2公开(公告)日： 2024-07-09
- 发明人: Jangbae Kim , Soojin Park , Jaegeon Ryu , Jonghyun Chae , Jihye Yang
- 申请人： LG CHEM, LTD. , POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION
- 申请人地址： KR Seoul
- 专利权人： LG ENERGY SOLUTION, LTD.,POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION
- 当前专利权人： LG ENERGY SOLUTION, LTD.,POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION
- 当前专利权人地址： KR Seoul; KR Pohang-si
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 优先权： KR 20190027137 2019.03.08 KR 20200028206 2020.03.06
- 国际申请： PCT/KR2020/003204 2020.03.06
- 国际公布： WO2020/184917A 2020.09.17
- 进入国家日期： 2021-04-14
- 主分类号： H01M4/00
- IPC分类号： H01M4/00 ; C01B33/023 ; H01M4/134 ; H01M4/38 ; H01M4/02 ; H01M10/0525
摘要：
A sulfur-doped silicon negative electrode material, a preparation method for a sulfur-doped silicon negative electrode material, a negative electrode for a lithium secondary battery comprising the sulfur-doped silicon negative electrode material, and a lithium secondary battery comprising the negative electrode, wherein the sulfur-doped silicon negative electrode material has an internal pore channel having an average width of 500 nm to 3 μm and an average external diameter of 1 μm to 5 μm.
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