发明授权
- 专利标题: Current and voltage limit circuitry for resistive random access memory programming
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申请号: US17646427申请日: 2021-12-29
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公开(公告)号: US12040017B2公开(公告)日: 2024-07-16
- 发明人: Lior Dagan
- 申请人: Weebit Nano Ltd.
- 申请人地址: IL Hod Hasharon
- 专利权人: Weebit Nano Ltd.
- 当前专利权人: Weebit Nano Ltd.
- 当前专利权人地址: IL Hod Hasharon
- 代理机构: M&B IP Analysts, LLC
- 主分类号: G11C16/04
- IPC分类号: G11C16/04 ; G11C13/00 ; H10B63/00
摘要:
A programming circuitry for a resistor of a resistive random-access memory (ReRAM) is provided. The programming circuitry includes a current-limiting circuit; a current-terminating circuit including a current measurement circuit and a control circuit; and a voltage-limiting circuit, wherein the current-limiting circuit, the current-terminating circuit, and the voltage-limiting circuit operate in concert.
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