Invention Grant
- Patent Title: Magnetoresistance effect element
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Application No.: US18106683Application Date: 2023-02-07
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Publication No.: US12040115B1Publication Date: 2024-07-16
- Inventor: Kazuumi Inubushi , Tomoyuki Sasaki
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Main IPC: H01F10/32
- IPC: H01F10/32 ; G01R33/09 ; H10N52/85 ; G11B5/39 ; H03H1/00 ; H03H7/06 ; H10B61/00

Abstract:
This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The non-magnetic layer is between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer contains at least partially crystallized Heusler alloy containing Co. The non-magnetic layer has a first non-magnetic region and a second non-magnetic region. Each of the second non-magnetic region is sandwiched between the first non-magnetic regions in a thickness direction of the non-magnetic layer. Atoms or molecules constituting each of the second non-magnetic regions are smaller than atoms or molecules constituting the first non-magnetic region. Each crystal structure of the second non-magnetic region is a NaCl type structure. At least a part of the second non-magnetic region is crystallized continuously with the first non-magnetic region and the first ferromagnetic layer or the second ferromagnetic layer.
Public/Granted literature
- US20240266099A1 MAGNETORESISTANCE EFFECT ELEMENT Public/Granted day:2024-08-08
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