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公开(公告)号：US12288576B2
公开(公告)日：2025-04-29
申请号：US18373642
申请日：2023-09-27
Applicant: TDK CORPORATION
Inventor： Shinto Ichikawa , Kazuumi Inubushi , Katsuyuki Nakada
IPC: G11B5/39 , G01R33/09 , G11C11/16 , H01F10/16 , H01F10/193 , H01F10/26 , H01F10/32 , H03H7/12 , H10B61/00
Abstract: A magnetoresistance effect element having a large MR ratio is provided.
This magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a nonmagnetic layer. The first ferromagnetic layer includes a first layer and a second layer. The first layer is closer to the nonmagnetic layer than the second layer. The first layer has a Heusler alloy containing at least partially crystallized Co. The second layer contains a material different from the Heusler alloy and has at least a partially crystallized ferromagnetic material. The first layer and the second layer have added first atoms. The first atom is any one selected from the group consisting of Mg, Al, Cr, Mn, Ni, Cu, Zn, Pd, Cd, In, Sn, Sb, Pt, Au, and Bi.-
公开(公告)号：US12217775B2
公开(公告)日：2025-02-04
申请号：US18240657
申请日：2023-08-31
Applicant: TDK CORPORATION
Inventor： Kazuumi Inubushi , Katsuyuki Nakada , Tetsuya Uemura
Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1): Co2FeαXβ (1) (in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and α and β represent numbers that satisfy 2.3≤α+β, α
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3.发明授权公开(公告)号：US10964341B2
公开(公告)日：2021-03-30
申请号：US16999611
申请日：2020-08-21
Applicant: TDK CORPORATION
Inventor： Kazuumi Inubushi , Katsuyuki Nakada
Abstract: A nonmagnetic spacer layer in a magnetoresistive effect element includes a nonmagnetic metal layer that is formed of Ag and at least one of a first insertion layer that is disposed on a bottom surface of the nonmagnetic metal layer and a second insertion layer that is disposed on a top surface of the nonmagnetic metal layer. The first insertion layer and the second insertion layer include an Fe alloy that is expressed by FeγX1-γ. Here, X denotes one or more elements selected from a group consisting of O, Al, Si, Ga, Mo, Ag, and Au, and γ satisfies 0
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公开(公告)号：US12278033B2
公开(公告)日：2025-04-15
申请号：US17981112
申请日：2022-11-04
Applicant: TDK CORPORATION
Inventor： Shinto Ichikawa , Katsuyuki Nakada , Kazuumi Inubushi
Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer. The nonmagnetic layer is between the first ferromagnetic layer and the second ferromagnetic layer. At least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy layer. The nonmagnetic layer includes a first region and a second region in a plane. Both of the first region and the second region are formed of a metal. The second region is different in constituent material from the first region. The second region has a crystal structure of a body-centered cubic lattice structure (bcc).
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公开(公告)号：US11944018B2
公开(公告)日：2024-03-26
申请号：US17858200
申请日：2022-07-06
Applicant: TDK CORPORATION
Inventor： Kazuumi Inubushi , Katsuyuki Nakada , Shinto Ichikawa
CPC classification number: H10N50/85 , H10N50/10 , G11B5/372 , G11C11/161
Abstract: A magnetoresistance effect element of the present disclosure includes a first Ru alloy layer, a first ferromagnetic layer, a non-magnetic metal layer, and a second ferromagnetic layer in order, wherein the first Ru alloy layer contains one or more Ru alloys represented by the following general formula (1),
RuαX1-α (1)
where, in the general formula (1), the symbol X represents one or more elements selected from the group consisting of Be, B, Ti, Y, Zr, Nb, Mo, Rh, In, Sn, La, Ce, Nd, Sm, Gd, Dy, Er, Ta, W, Re, Os, and Ir, and the symbol α represents a number satisfying 0.5-
Patent Agency Ranking
公开(公告)号：US11525873B2
公开(公告)日：2022-12-13
申请号：US17164958
申请日：2021-02-02
Applicant: TDK CORPORATION
Inventor： Shinto Ichikawa , Kazuumi Inubushi , Katsuyuki Nakada
Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a first non-magnetic layer; and a second non-magnetic layer, wherein, the first ferromagnetic layer and the second ferromagnetic layer are formed so that at least one of them includes a Heusler alloy layer, the first non-magnetic layer is provided between the first ferromagnetic layer and the second ferromagnetic layer, the second non-magnetic layer is in contact with any surface of the Heusler alloy layer and has a discontinuous portion with respect to a lamination surface, and the second non-magnetic layer is made of a material different from that of the first non-magnetic layer and is a (001)-oriented oxide containing Mg.
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公开(公告)号：US11450342B2
公开(公告)日：2022-09-20
申请号：US17356038
申请日：2021-06-23
Applicant: TDK CORPORATION
Inventor： Kazuumi Inubushi , Katsuyuki Nakada
Abstract: A magnetoresistance effect element includes a underlayer, a protective layer, a laminated body located between the underlayer and the protective layer and including a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer in order from a side closest to the underlayer, and an intermediate layer located between the underlayer and the first ferromagnetic layer, or between the second ferromagnetic layer and the protective layer, wherein, one ferromagnetic layer selected from the first ferromagnetic layer and the second ferromagnetic layer and in contact with the intermediate layer is a Heusler alloy having a Co basis, and a main component of the intermediate layer is an element other than Co among elements constituting the Heusler alloy having the Co basis.
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公开(公告)号：US11158785B2
公开(公告)日：2021-10-26
申请号：US17131069
申请日：2020-12-22
Applicant: TDK CORPORATION
Inventor： Shinto Ichikawa , Kazuumi Inubushi , Katsuyuki Nakada
Abstract: A magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer, the first layer contains a crystallized Co-based Heusler alloy, at least a part of the second layer is crystallized, the second layer contains a ferromagnetic element, boron element and an additive element, and the additive element is any element selected from a group consisting of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt, and Au.
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公开(公告)号：US10971679B2
公开(公告)日：2021-04-06
申请号：US16720085
申请日：2019-12-19
Applicant: TDK CORPORATION
Inventor： Kazuumi Inubushi , Katsuyuki Nakada
Abstract: A magnetoresistive effect element, which includes: a first ferromagnetic layer as a magnetization fixed layer; a second ferromagnetic layer as a magnetization free layer; and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer. The nonmagnetic spacer layer includes an Ag alloy represented by General Formula (1), and thereby lattice mismatch between the nonmagnetic spacer layer, and the first ferromagnetic layer and/or the second ferromagnetic layer is reduced, compared to lattice mismatch when the nonmagnetic spacer layer is formed of Ag, AgγX1-γ (1) where X indicates one element selected from the group made of Al, Cu, Ga, Ge, As, Y, La, Sm, Yb, and Pt, and 0
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10.发明授权公开(公告)号：US10937451B2
公开(公告)日：2021-03-02
申请号：US16817690
申请日：2020-03-13
Applicant: TDK CORPORATION
Inventor： Kazuumi Inubushi , Katsuyuki Nakada
Abstract: A magnetoresistive effect element according to the present invention includes: a first ferromagnetic layer as a magnetization fixed layer; a second ferromagnetic layer as a magnetization free layer; and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer. The nonmagnetic spacer layer comprises an Al alloy represented by General Formula (1), and thereby lattice mismatch between the nonmagnetic spacer layer and the first ferromagnetic layer and/or the second ferromagnetic layer is reduced, compared to lattice mismatch when the nonmagnetic spacer layer is formed of Al. AlγX1-γ (1) [wherein, X indicates one element selected from the group consisting of Li, N, Mg, Si, Sc, Cr, Fe, Ni, Cu, Zn, Ga, Ge, Zr, Ru, Pd, Ag, Sn, W, Pt, Au and Th, and γ is 0.5
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