Light emitting diode panel and method for manufacturing the light emitting diode panel
Abstract:
A light emitting diode (LED) panel is provided. The LED panel includes a thin-film transistor (TFT) backplane which includes an insulator film disposed on a top surface of a substrate, a plurality of organic films disposed on a top surface of the insulator film, and pixel electrodes disposed on a top surface of each of the plurality of organic films. The LED panel further includes a plurality of LEDs respectively bonded to the pixel electrodes disposed on the top surface of each of the plurality of organic films, wherein the plurality of organic films has the different heights according to a type of each of the plurality of LEDs respectively bonded to the pixel electrodes disposed on the top surface of each of the plurality of organic films.
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