Invention Grant
- Patent Title: Lateral bipolar transistors
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Application No.: US17525634Application Date: 2021-11-12
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Publication No.: US12040388B2Publication Date: 2024-07-16
- Inventor: Hong Yu , Judson R. Holt , Alexander Derrickson
- Applicant: GLOBALFOUNDRIES U.S. Inc.
- Applicant Address: US NY Malta
- Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee Address: US NY Malta
- Agency: Calderon Safran & Cole, PC
- Agent Francois Pagette; Andrew M. Calderon
- Main IPC: H01L29/735
- IPC: H01L29/735 ; H01L29/08 ; H01L29/10 ; H01L29/165 ; H01L29/66
Abstract:
The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes: an extrinsic base having at least one sidewall with a gradient concentration of semiconductor material; an emitter on a first side of the extrinsic base; and a collector on a second side of the extrinsic base.
Public/Granted literature
- US20230066437A1 LATERAL BIPOLAR TRANSISTORS Public/Granted day:2023-03-02
Information query
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