Invention Grant
- Patent Title: Tiled lateral thyristor
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Application No.: US17658335Application Date: 2022-04-07
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Publication No.: US12040389B2Publication Date: 2024-07-16
- Inventor: Vadim Kushner , Nima Beikae
- Applicant: Silanna Asia Pte Ltd
- Applicant Address: SG Singapore
- Assignee: Silanna Asia Pte Ltd
- Current Assignee: Silanna Asia Pte Ltd
- Current Assignee Address: SG Singapore
- Agency: MLO, a professional corp.
- Main IPC: H01L29/74
- IPC: H01L29/74 ; H01L21/8228 ; H01L21/84 ; H01L23/528 ; H01L23/538 ; H01L27/02 ; H01L27/06 ; H01L27/08 ; H01L27/12 ; H01L29/06

Abstract:
A thyristor tile includes first and second PNP tiles and first and second NPN tiles. Each PNP tile is adjacent to both NPN tiles, and each NPN tile is adjacent to both PNP tiles. A thyristor includes a plurality of PNP tiles and a plurality of NPN tiles. The PNP and NPN tiles are arranged in an alternating configuration in both rows and columns. The PNP tiles are oriented perpendicular to the NPN tiles. Interconnect layers have a geometry that enables even distribution of signals to the PNP and NPN tiles.
Public/Granted literature
- US20220231152A1 Tiled Lateral Thyristor Public/Granted day:2022-07-21
Information query
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