- 专利标题: High-sensitivity electromagnetic radiation detection component and method for manufacturing such a component
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申请号: US17785566申请日: 2020-12-16
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公开(公告)号: US12044577B2公开(公告)日: 2024-07-23
- 发明人: Jean-Jacques Yon , Antoine Albouy
- 申请人: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 申请人地址: FR Paris
- 专利权人: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 当前专利权人: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 当前专利权人地址: FR Paris
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: FR 14784 2019.12.19
- 国际申请: PCT/FR2020/052462 2020.12.16
- 国际公布: WO2021/123616A 2021.06.24
- 进入国家日期: 2022-06-15
- 主分类号: G01J5/02
- IPC分类号: G01J5/02 ; G01J5/08 ; G01J5/22
摘要:
A component for detecting electromagnetic radiation includes a detection structure and a supply circuit for the detection structure. The detection structure includes a transistor associated with an absorbent element for detecting the rise in temperature of the absorbent element when electromagnetic radiation is absorbed. The supply circuit is configured to supply the detection structure in operation such that a channel zone of the structure has, at the location of one of its first and the second faces, a layer having carriers of a second type of conductivity opposite to a first type of conductivity of a source zone and of a drain zone of the transistor, the layer being referred to as blocking layer.
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