发明授权
- 专利标题: Memory architecture
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申请号: US17149138申请日: 2021-01-14
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公开(公告)号: US12052860B2公开(公告)日: 2024-07-30
- 发明人: Amit Chhabra , David Victor Pietromonaco
- 申请人: Arm Limited
- 申请人地址: GB Cambridge
- 专利权人: Arm Limited
- 当前专利权人: Arm Limited
- 当前专利权人地址: GB Cambridge
- 代理机构: Pramudji Law Group PLLC
- 代理商 Ari Pramudji
- 主分类号: H01L27/092
- IPC分类号: H01L27/092 ; G11C7/06 ; G11C7/10 ; H01L29/06 ; H01L29/423 ; H01L29/786 ; H10B20/00
摘要:
Various implementations described herein relate to a device with a multi-transistor logic structure for use in memory architecture. In some applications, the multi-transistor logic structure may have a pair of P-type transistors that are arranged in a P-over-P multi-transistor stack. In other applications, the multi-transistor logic structure may have a pair of N-type transistors that are arranged in an N-over-N multi-transistor stack.
公开/授权文献
- US20220223610A1 Memory Architecture 公开/授权日:2022-07-14
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