Invention Grant
- Patent Title: Quadrature error correction circuit and semiconductor memory device including the same
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Application No.: US18218243Application Date: 2023-07-05
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Publication No.: US12057156B2Publication Date: 2024-08-06
- Inventor: Hojun Yoon , Wonjoo Jung , Jaewoo Park , Youngchul Cho , Youngdon Choi , Junghwan Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR 20210050830 2021.04.20
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G11C11/4076 ; G11C29/02 ; H03K5/156 ; H03K5/12

Abstract:
A quadrature error correction circuit includes a duty cycle adjusting circuit, a phase interpolator, a phase detector, and a delay control circuit. The duty cycle adjusting circuit generates a first corrected clock signal and a second corrected clock signal whose skew and duty cycle error are concurrently adjusted by adjusting a delay of edges of a second clock signal and adjusting a delay of a falling edge of a first clock signal based on first through fourth control code sets. The phase interpolator generates a second delayed and selected clock signal by delaying a second selected clock signal selected from first through fourth adjusted clock signals. A phase detector detects a phase difference between a first selected clock signal and the second delayed and selected clock signal to generate an up/down signal. The delay control circuit generates the first through fourth control code sets based on the up/down signal.
Public/Granted literature
- US20230343383A1 QUADRATURE ERROR CORRECTION CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME Public/Granted day:2023-10-26
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