- 专利标题: Preparation method of conductive gallium oxide based on deep learning and vertical Bridgman growth method
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申请号: US17761322申请日: 2021-02-07
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公开(公告)号: US12057199B2公开(公告)日: 2024-08-06
- 发明人: Hongji Qi , Long Zhang , Duanyang Chen
- 申请人: HANGZHOU FUJIA GALLIUM TECHNOLOGY CO. LTD.
- 申请人地址: CN Zhejiang
- 专利权人: HANGZHOU FUJIA GALLIUM TECHNOLOGY CO. LTD.
- 当前专利权人: HANGZHOU FUJIA GALLIUM TECHNOLOGY CO. LTD.
- 当前专利权人地址: CN Hangzhou
- 代理机构: Maier & Maier, PLLC
- 优先权: CN 2011642153.8 2020.12.31
- 国际申请: PCT/CN2021/075864 2021.02.07
- 国际公布: WO2022/141760A 2022.07.07
- 进入国家日期: 2022-03-17
- 主分类号: C30B11/02
- IPC分类号: C30B11/02 ; G06N3/0464 ; G06N3/08 ; G16C20/10 ; G16C20/70
摘要:
A preparation method of conductive gallium oxide based on deep learning and vertical Bridgman growth method. The prediction method includes: obtaining a preparation data of the conductive gallium oxide single crystal, the preparation data includes a seed crystal data, an environmental data, a control data and a raw material data, and the raw material data includes a doping type data and a conductive doping concentration; preprocessing the preparation data to obtain a preprocessed preparation data; inputting the preprocessed preparation data into a trained neural network model, and obtaining a predicted property data corresponding to the conductive gallium oxide single crystal through the trained neural network model, the predicted property data includes a predicted carrier concentration.
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