- 专利标题： Energy harvest and storage device for semiconductor chips and methods for forming the same
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申请号： US17730392申请日： 2022-04-27
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公开(公告)号： US12057516B2公开(公告)日： 2024-08-06
- 发明人: Fu-Hai Li , Yi Ching Ong , Kuo-Ching Huang
- 申请人： Taiwan Semiconductor Manufacturing Company Limited
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人地址： TW Hsinchu
- 代理机构： The Marbury Law Group, PLLC
- 主分类号： H01L31/07
- IPC分类号： H01L31/07 ; H01L31/053 ; H01L31/18
摘要：
A semiconductor structure may include semiconductor devices located on a substrate, metal interconnect structures that are located within dielectric material layers overlying the semiconductor devices and are electrically connected to the semiconductor devices, and an energy harvesting device located over the metal interconnect structures and comprising a Schottky barrier diode, a first diode electrode located on a first side of the Schottky barrier diode, and a second diode electrode connected to a second side of the Schottky barrier diode.
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