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公开(公告)号：US20240389483A1
公开(公告)日：2024-11-21
申请号：US18317118
申请日：2023-05-15
Inventor： Yu-Wei Ting , Harry-Hak-Lay Chuang , Kuo-Pin Chang , Kuo-Ching Huang
Abstract: An embodiment phase change material (PCM) switch may include a phase change material element, a first electrode, a second electrode, and a direct heating element including an ionic resistance change material contacting the phase change material element. The phase change material element may include a phase change material that switches from an electrically conducting phase to an electrically insulating phase or from an electrically insulating phase to an electrically conducting phase by application of a heat pulse generated by the heating element. The PCM switch may further include a switching electrode contacting the ionic resistance change material such that the ionic resistance change material may be switched from a high resistance to a low resistance state by application of voltages to the first electrode, the second electrode, and the switching electrode. Electrical currents within the ionic resistance change material may generate heat that switches the phase change material element.
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公开(公告)号：US20240387516A1
公开(公告)日：2024-11-21
申请号：US18317986
申请日：2023-05-16
Inventor： Kuo-Pin Chang , Chien Hung Liu , Yu-Wei Ting , Kuo-Ching Huang
IPC: H01L27/06 , H01L23/34 , H01L23/373 , H01L23/522 , H01L27/088 , H02M1/00 , H02M3/157
Abstract: A device structure includes a voltage regulator circuit, which includes: a first semiconductor die including a pulse width modulation (PWM) circuit and connected to a PWM voltage output node at which a pulsed voltage output is generated; and a series connection of an inductor and a parallel connection circuit, the parallel connection circuit including a parallel connection of capacitor-switch assemblies. A first end node of the series connection is connected to the PWM voltage output node; a second end node of the series connection is connected to electrical ground; each of the capacitor-switch assemblies includes a respective series connection of a respective capacitor and a respective switch; and each switch within the capacitor-switch assemblies is located within the first semiconductor die.
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公开(公告)号：US20240387399A1
公开(公告)日：2024-11-21
申请号：US18317994
申请日：2023-05-16
Inventor： Fu-Hai Li , Chien Hung Liu , Hsien Jung Chen , Kuo-Ching Huang , Harry-Hak-Lay Chuang
IPC: H01L23/552 , H01L23/00 , H01L23/48 , H01L23/522
Abstract: A semiconductor may include a handle substrate, a semiconductor material layer on which semiconductor devices, metal interconnect structures, dielectric material layers, and an inductor structure are located, and a patterned magnetic shielding layer including at least one portion of a ferromagnetic material having relative permeability of at least 20 and disposed between the semiconductor material layer and the handle substrate and reducing electromagnetic coupling between the inductor structure and the handle substrate.
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公开(公告)号：US20240250089A1
公开(公告)日：2024-07-25
申请号：US18627692
申请日：2024-04-05
Inventor： Harry-Hak-Lay Chuang , Wei-Cheng Wu , Chien Hung Liu , Hsin Fu Lin , Hsien Jung Chen , Henry Wang , Tsung-Hao Yeh , Kuo-Ching Huang
IPC: H01L27/12 , H01L21/762 , H01L21/84 , H01L29/66
CPC classification number: H01L27/1203 , H01L21/76251 , H01L21/76283 , H01L21/84 , H01L29/66772
Abstract: A layer stack including a first bonding dielectric material layer, a dielectric metal oxide layer, and a second bonding dielectric material layer is formed over a top surface of a substrate including a substrate semiconductor layer. A conductive material layer is formed by depositing a conductive material over the second bonding dielectric material layer. The substrate semiconductor layer is thinned by removing portions of the substrate semiconductor layer that are distal from the layer stack, whereby a remaining portion of the substrate semiconductor layer includes a top semiconductor layer. A semiconductor device may be formed on the top semiconductor layer.
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5.发明公开公开(公告)号：US20240099167A1
公开(公告)日：2024-03-21
申请号：US18303692
申请日：2023-04-20
Inventor： Fu-Hai Li , Yi Ching Ong , Kuo-Ching Huang
CPC classification number: H10N70/8613 , H10N70/011 , H10N70/231 , H10N70/823 , H10N70/8413 , H10N70/8828
Abstract: An embodiment phase change material (PCM) switch may include a PCM element having a first electrode and a second electrode, a heating element coupled to a first side of the PCM element, and a heat spreader formed on a second side of the PCM element opposite to the heating element. The PCM element may include a phase change material that switches from an electrically conducting phase to an electrically insulating phase by application of a heat pulse provided by the heating element. The first electrode, the second electrode, the PCM element, and the heat spreader may be configured as an RF switch that blocks RF signals when the phase change material element is the electrically insulating phase and conducts RF signals when the when the phase change material element is in the electrically conducting phase. The heat spreader may be electrically isolated from the heating element and the PCM element.
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Patent Agency Ranking
6.发明公开公开(公告)号：US20230422643A1
公开(公告)日：2023-12-28
申请号：US17851072
申请日：2022-06-28
Inventor： Kuo-Pin Chang , Yu-Wei Ting , Kuo-Ching Huang
CPC classification number: H01L45/1286 , H01L27/2463 , H01L45/1675 , H01L45/06 , H01L45/1226 , H01L45/148 , H01L45/143 , H01L45/144
Abstract: A semiconductor structure comprising a first electrode, a second electrode, a phase-change material (PCM) line in contact with and positioned between the first electrode and the second electrode, at least two heater lines positioned between the first electrode and the second electrode, and an isolation layer positioned between the PCM line and the at least two heater lines is provided. A method of forming a semiconductor structure is provided, the method including forming a dielectric isolation layer having a planar top surface over a substrate, forming at least two heater lines over the planar top surface, forming at least one heater-capping dielectric plate over the at least two heater lines, forming a phase-change material (PCM) line over the at least one heater-capping dielectric plate, forming a first electrode and a second electrode, and forming a PCM-capping dielectric plate over the PCM line.
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7.发明申请公开(公告)号：US20240397733A1
公开(公告)日：2024-11-28
申请号：US18321898
申请日：2023-05-23
Inventor： Wei Ting Hsieh , Kuo-Ching Huang , Yu-Wei Ting , Kuo-Pin Chang , Hung-Ju Li
Abstract: A device structure includes a first series connection of a first phase change memory (PCM) switch and a second PCM switch. The first PCM switch includes a first heater line, a first PCM line, and a first contact electrode and a second contact electrode located on the first heater line. The second PCM switch includes a second heater line, a second PCM line, and a third contact electrode and a fourth contact electrode located on the second heater line. The second contact electrode is electrically connected to the third contact electrode. The fourth contact electrode is electrically grounded. One of the first contact electrode and the second contact electrode includes an radio-frequency (RF) signal input port. Another of the first contact electrode and the second contact electrode comprises an RF signal output port. The device structure may function as a combination PCM switch that decreases noise level during signal transmission.
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8.发明申请公开(公告)号：US20240389487A1
公开(公告)日：2024-11-21
申请号：US18317268
申请日：2023-05-15
Inventor： Wei Ting Hsieh , Kuo-Ching Huang , Yu-Wei Ting , Ching-En Chen , Kuo-Pin Chang
IPC: H10N79/00
Abstract: A device structure includes semiconductor devices located on a substrate; metal interconnect structures located in dielectric material layers overlying the semiconductor devices; and a non-Ohmic voltage-triggered switch including a first switch electrode that is electrically connected to one of the semiconductor devices through a subset of the metal interconnect structures, a second switch electrode, and a non-Ohmic switching material portion providing a non-Ohmic current-voltage characteristics and in contact with the first switch electrode and the second switch electrode. The non-Ohmic voltage-triggered switch may be used as an electrostatic discharge (ESD) switch.
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公开(公告)号：US20240047508A1
公开(公告)日：2024-02-08
申请号：US17882670
申请日：2022-08-08
Inventor： Yu-Sheng Chen , Hsien Jung Chen , Kuen-Yi Chen , Chien Hung Liu , Yi Ching Ong , Yu-Jen Wang , Kuo-Ching Huang , Harry-Hak-Lay Chuang
IPC: H01L49/02
CPC classification number: H01L28/10
Abstract: A semiconductor structure includes an inductive metal line located in a dielectric material layer that overlies a semiconductor substrate and laterally encloses a first area; and an array of first ferromagnetic plates including a first ferromagnetic material and overlying or underlying the inductive metal line. For any first point that is selected within volumes of the first ferromagnetic plates, a respective second point exists within a horizontal surface of the inductive metal line such that a line connecting the first point and the second point is vertical or has a respective first taper angle that is less than 20 degrees with respective to a vertical direction. The magnetic field passing through the first ferromagnetic plates is applied generally along a hard direction of magnetization and the hysteresis effect is minimized.
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公开(公告)号：US09576651B2
公开(公告)日：2017-02-21
申请号：US14601458
申请日：2015-01-21
Inventor： Chun-Yang Tsai , Yu-Wei Ting , Kuo-Ching Huang , Chia-Fu Lee
IPC: G11C13/00
CPC classification number: G11C13/004 , G11C13/0069 , G11C2013/0071 , G11C2213/52 , G11C2213/79
Abstract: According to one embodiment, a method of RRAM operations is provided. The method includes the following operations: providing a first voltage difference across a resistor of the RRAM during a read operation; and providing a second voltage difference across the resistor of the RRAM during a reset operation, wherein the first voltage difference has the same polarity as the second voltage difference.
Abstract translation: 根据一个实施例，提供了一种RRAM操作的方法。 该方法包括以下操作：在读操作期间在RRAM的电阻器两端提供第一电压差; 以及在复位操作期间在所述RRAM的电阻器两端提供第二电压差，其中所述第一电压差具有与所述第二电压差相同的极性。
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