- 专利标题: Thermal conductive silicone composition, semiconductor device, and method for manufacturing the same
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申请号: US17607133申请日: 2020-04-06
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公开(公告)号: US12060517B2公开(公告)日: 2024-08-13
- 发明人: Shota Akiba
- 申请人: SHIN-ETSU CHEMICAL CO., LTD.
- 申请人地址: JP Tokyo
- 专利权人: SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人: SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人地址: JP Tokyo
- 代理机构: Oliff PLC
- 优先权: JP 19098441 2019.05.27
- 国际申请: PCT/JP2020/015462 2020.04.06
- 国际公布: WO2020/241054A 2020.12.03
- 进入国家日期: 2021-10-28
- 主分类号: H01L23/00
- IPC分类号: H01L23/00 ; C08G77/08 ; C08G77/12 ; C08G77/20 ; C08K3/04 ; C08K3/08 ; C09K5/14 ; H01L23/367 ; H01L23/373
摘要:
A thermal conductive silicone composition contains, in specific amounts, each of (A) an organopolysiloxane containing two or more alkenyl groups bonded to a silicon atom in one molecule, (B) an organohydrogenpolysiloxane containing two or more hydrogen atoms bonded to a silicon atom in one molecule, (C) a catalyst for hydrosilylation reaction, (D) a silver powder with a tapped density of 3.0 g/cm3 or higher, a specific surface area of 2.0 m2/g or less, and an aspect ratio of 1 to 30, and (E) a natural graphite powder or a synthetic graphite powder with an average particle size of 3 μm to 50 μm. This provides: a thermal conductive silicone composition that gives a cured material having a favorable heat-dissipating property; a semiconductor device using the cured material of the composition; and a method for manufacturing the same.
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