- 专利标题： RF device without silicon handle substrate for enhanced thermal and electrical performance and methods of forming the same
-
申请号： US18306599申请日： 2023-04-25
-
公开(公告)号： US12062623B2公开(公告)日： 2024-08-13
- 发明人: Julio C. Costa , Michael Carroll
- 申请人： Qorvo US, Inc.
- 申请人地址： US NC Greensboro
- 专利权人： Qorvo US, Inc.
- 当前专利权人： Qorvo US, Inc.
- 当前专利权人地址： US NC Greensboro
- 代理机构： Withrow & Terranova, P.L.L.C.
- 分案原申请号： US16427019 2019.05.30
- 主分类号： H01L23/538
- IPC分类号： H01L23/538 ; H01L21/48 ; H01L21/56 ; H01L21/78 ; H01L23/00 ; H01L23/31 ; H01L23/367 ; H01L23/66
摘要：
The present disclosure relates to a radio frequency (RF) device that includes a mold device die and a multilayer redistribution structure underneath the mold device die. The mold device die includes a device region with a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion over the BEOL portion, and a first mold compound. The FEOL portion includes an active layer, a contact layer, and isolation sections. Herein, the active layer and the isolation sections reside over the contact layer, and the active layer is surrounded by the isolation sections. The first mold compound resides over the active layer without silicon crystal, which has no germanium content, in between. The multilayer redistribution structure includes redistribution interconnections and a number of bump structures that are at bottom of the multilayer redistribution structure and electrically coupled to the mold device die via the redistribution interconnections.
公开/授权文献
信息查询
IPC分类:
