A layout structure of a capacitive cell using forksheet FETs is provided. In transistors P3 and N3, VDD is supplied to a pair of pads and a gate interconnect, and VSS is supplied to a pair of pads and a gate interconnect. Capacitances are produced between nanosheets and the gate interconnect and between nanosheets and the gate interconnect. The faces of the nanosheets closer to the nanosheets are exposed from the gate interconnect, and the faces of the nanosheets closer to the nanosheets are exposed from the gate interconnect.