- 专利标题: Acoustic wave device and manufacturing method thereof
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申请号: US17193492申请日: 2021-03-05
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公开(公告)号: US12068735B2公开(公告)日: 2024-08-20
- 发明人: Ta-Cheng Hsu , Wei-Shou Chen , Chung-Jen Chung , Chia-Min Chang
- 申请人: EPISTAR CORPORATION
- 申请人地址: TW Hsinchu
- 专利权人: EPISTAR CORPORATION
- 当前专利权人: EPISTAR CORPORATION
- 当前专利权人地址: TW Hsinchu
- 代理机构: MUNCY GEISSLER OLDS & LOWE P.C.
- 优先权: TW 9107352 2020.03.06
- 主分类号: H03H9/02
- IPC分类号: H03H9/02 ; H03H3/02 ; H03H9/05
摘要:
An acoustic wave device, includes piezoelectric layer having an upper piezoelectric surface and a lower piezoelectric surface; an upper electrode formed on the upper piezoelectric surface; a lower electrode; a support layer including a non-monocrystalline insulating material; and a lower cover, wherein the lower electrode and the support layer formed between the lower cover and the lower piezoelectric surface.
公开/授权文献
- US20210281237A1 ACOUSTIC WAVE DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日:2021-09-09
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