公开(公告)号：US12125943B2

公开(公告)日：2024-10-22

申请号：US18505348

申请日：2023-11-09

申请人： EPISTAR CORPORATION

发明人： Huan-Yu Lai ,  Li-Chi Peng

IPC分类号： H01L33/14 ,  H01L33/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32

CPC分类号： H01L33/145 ,  H01L33/0062 ,  H01L33/04 ,  H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L33/305 ,  H01L33/32 ,  H01L33/325

摘要： A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first nitride semiconductor layer between the active region and the electron blocking structure; and a second nitride semiconductor layer between the electron blocking structure and the second semiconductor layer. The first nitride semiconductor layer includes a first indium content, a first aluminum content and a first conductivity-type dopant. The second nitride semiconductor layer includes a second indium content, a second aluminum content and a second conductivity-type dopant. The electron blocking structure includes a first semiconductor layer including a third indium content and a third aluminum content; wherein the third indium content is greater than the second indium content.

公开(公告)号：US20240339564A1

公开(公告)日：2024-10-10

申请号：US18625617

申请日：2024-04-03

申请人： EPISTAR CORPORATION

发明人： Wei-Che WU ,  Chih-Hao CHEN ,  Yu-Ling LIN ,  Chao-Hsing CHEN ,  Yong-Yang CHEN

IPC分类号： H01L33/22 ,  H01L33/00 ,  H01L33/60

CPC分类号： H01L33/22 ,  H01L33/005 ,  H01L33/60

摘要： A semiconductor device includes a semiconductor stack; a substrate formed on the semiconductor stack, including a lower surface connected to the semiconductor stack, an upper surface opposite to the lower surface, and a side surface between the lower surface and the upper surface, wherein the side surface includes a mirror area, a first scribing area, and a first crack area, the mirror area is closer to the lower surface than the first scribing area to the lower surface, and the first scribing area is located between the mirror area and the first crack area; an optical structure on the upper surface of the substrate; and a reflective structure on a side surface of the first scribing area and the first crack area, wherein the first scribing area is arranged below the upper surface of the substrate with a distance less than or equal to ¼ of a thickness of the substrate.

公开(公告)号：US20240339345A1

公开(公告)日：2024-10-10

申请号：US18749201

申请日：2024-06-20

申请人： EPISTAR CORPORATION

发明人： Min-Hsun HSIEH ,  De-Shan KUO ,  Chang-Lin LEE ,  Jhih-Yong YANG

IPC分类号： H01L21/677 ,  H01L21/67 ,  H01L21/683 ,  H01L33/00

CPC分类号： H01L21/67721 ,  H01L21/67144 ,  H01L21/67288 ,  H01L21/6773 ,  H01L21/6836 ,  H01L33/0075 ,  H01L2221/68322 ,  H01L2221/68354 ,  H01L2221/68368

摘要： A chip transferring method includes steps of: providing a plurality of chips on a first load-bearing structure; measuring photoelectric characteristic values of the plurality of chips; categorizing the plurality of chips into a first portion of the plurality of chips and a second portion of the plurality of chips according to the photoelectric characteristic values of the plurality of chips, wherein the second portion of the plurality of chips comprise parts of the plurality of chips which photoelectric characteristic value falls within an unqualified range; removing the second portion of the plurality of chips from the first load-bearing structure; dividing the first portion of the plurality of chips into a plurality of blocks, wherein each of the plurality of blocks comprising multiple chips of the first portion of the plurality of chips; and transferring the first portion of the plurality of chips in one of the plurality of blocks to a second load-bearing structure in single-batch.

公开(公告)号：US12107080B2

公开(公告)日：2024-10-01

申请号：US18070669

申请日：2022-11-29

申请人： EPISTAR CORPORATION

发明人： Min-Hsun Hsieh ,  Tzu-Hsiang Wang

IPC分类号： H01L29/20 ,  H01L23/00 ,  H01L25/075 ,  H01L33/00 ,  H01L33/62

CPC分类号： H01L25/0753 ,  H01L24/32 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/32227 ,  H01L2224/83192 ,  H01L2224/83851

摘要： The application discloses a light-emitting device including a carrier which includes an insulating layer, an upper conductive layer formed on the insulating layer, a plurality of conducting vias passing through the insulating layer, and a lower conductive layer formed under the insulating layer; four light-emitting elements arranged in rows and columns flipped on the carrier; and a light-passing unit formed on the carrier and covering the four light-emitting elements; wherein each of the light-emitting elements including a first light-emitting bare die emitting a first dominant wavelength, a second light-emitting bare die emitting a second dominant wavelength, and a third light-emitting bare die emitting a third dominant wavelength; and wherein two adjacent first light-emitting bare die in a row has a first distance W1, two adjacent first light-emitting bare die in a column has a second distance W2, and W1 is the same as W2.

公开(公告)号：US12100793B2

公开(公告)日：2024-09-24

申请号：US18175381

申请日：2023-02-27

申请人： EPISTAR CORPORATION

发明人： Min-Hsun Hsieh ,  Shau-Yi Chen ,  Shao-You Deng

IPC分类号： H01L33/62 ,  H01L25/075

CPC分类号： H01L33/62 ,  H01L25/0753 ,  H01L2933/0066

摘要： A light-emitting device includes a carrier, a light-emitting element and a connection structure. The carrier includes a first electrical conduction portion. The light-emitting element includes a first light-emitting layer capable of emitting first light and a first contact electrode formed under the light-emitting layer. The first contact electrode is corresponded to the first electrical conduction portion. The connection structure includes a first electrical connection portion and a protective portion surrounding the first contact electrode and the first electrical connection portion. The first electrical connection portion includes an upper portion, a lower portion and a neck portion arranged between the upper portion and the lower portion. An edge of the upper portion is protruded beyond the neck portion, and an edge of the lower portion is protruded beyond the upper portion.

公开(公告)号：US20240313146A1

公开(公告)日：2024-09-19

申请号：US18669153

申请日：2024-05-20

申请人： EPISTAR CORPORATION

发明人： Min-Hsun HSIEH ,  Jen-Chieh YU ,  Chun-Wei CHEN

IPC分类号： H01L31/147 ,  G09G3/32 ,  H05B45/12

CPC分类号： H01L31/147 ,  G09G3/32 ,  H05B45/12 ,  G09G2320/0626

摘要： The present disclosure provides a light-emitting module and a display apparatus thereof. The light-emitting module includes a circuit substrate which includes a first surface and a second surface opposite to the first surface. The first surface includes a plurality of conductive channels, and the second surface includes a plurality of conductive pads. A plurality of light-emitting groups is arranged in a matrix on the first surface. Each of the light-emitting groups includes a red light-emitting diode chip, a green light-emitting diode chip, and a blue light-emitting diode chip. An electric component is disposed on the first surface and located in the light-emitting groups matrix. A translucent encapsulating component covers the plurality of light-emitting groups and the electric component. The light-emitting groups matrix comprises m columns and n rows.

公开(公告)号：US12080831B2

公开(公告)日：2024-09-03

申请号：US18212449

申请日：2023-06-21

申请人： EPISTAR CORPORATION

发明人： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Wen-Hung Chuang ,  Tzu-Yao Tseng ,  Cheng-Lin Lu

IPC分类号： H01L33/40 ,  F21K9/23 ,  F21K9/232 ,  F21K9/69 ,  F21Y115/10 ,  H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

CPC分类号： H01L33/405 ,  H01L33/22 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  F21K9/23 ,  F21K9/232 ,  F21K9/69 ,  F21Y2115/10 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L2933/0016 ,  H01L2933/0025

摘要： A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer includes a first edge; a reflective structure located on the second semiconductor layer and including an outer edge; a first electrode pad located on the reflective structure, wherein the first electrode pad including an outer side wall adjacent to the outer edge, wherein the outer edge extends beyond the outer side wall and does not exceed the first edge in a cross-sectional view of the light-emitting device.

公开(公告)号：US12068735B2

公开(公告)日：2024-08-20

申请号：US17193492

申请日：2021-03-05

申请人： EPISTAR CORPORATION

发明人： Ta-Cheng Hsu ,  Wei-Shou Chen ,  Chung-Jen Chung ,  Chia-Min Chang

IPC分类号： H03H9/02 ,  H03H3/02 ,  H03H9/05

CPC分类号： H03H9/02015 ,  H03H3/02 ,  H03H9/0514

摘要： An acoustic wave device, includes piezoelectric layer having an upper piezoelectric surface and a lower piezoelectric surface; an upper electrode formed on the upper piezoelectric surface; a lower electrode; a support layer including a non-monocrystalline insulating material; and a lower cover, wherein the lower electrode and the support layer formed between the lower cover and the lower piezoelectric surface.

公开(公告)号：US20240274766A1

公开(公告)日：2024-08-15

申请号：US18641195

申请日：2024-04-19

申请人： EPISTAR CORPORATION

发明人： Hsin-Ying WANG ,  Chih-Hao CHEN ,  Chien-Chih LIAO ,  Chao-Hsing CHEN ,  Wu-Tsung LO ,  Tsun-Kai KO ,  Chen OU

IPC分类号： H01L33/60 ,  H01L21/78 ,  H01L33/38 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56

CPC分类号： H01L33/60 ,  H01L21/78 ,  H01L33/38 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56

摘要： A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.

公开(公告)号：US12062748B2

公开(公告)日：2024-08-13

申请号：US18175395

申请日：2023-02-27

申请人： EPISTAR CORPORATION

发明人： Min-Hsun Hsieh ,  Shau-Yi Chen ,  Shao-You Deng

IPC分类号： H01L33/62 ,  H01L25/075

CPC分类号： H01L33/62 ,  H01L25/0753 ,  H01L2933/0066

摘要： A light-emitting device includes a carrier, a light-emitting element and a connection structure. The carrier includes a first electrical conduction portion. The light-emitting element includes a first light-emitting layer capable of emitting first light and a first contact electrode formed under the light-emitting layer. The first contact electrode is corresponded to the first electrical conduction portion. The connection structure includes a first electrical connection portion and a protective portion surrounding the first contact electrode and the first electrical connection portion. The first electrical connection portion includes an upper portion, a lower portion and a neck portion arranged between the upper portion and the lower portion. An edge of the upper portion is protruded beyond the neck portion, and an edge of the lower portion is protruded beyond the upper portion.