Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US17975609Application Date: 2022-10-28
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Publication No.: US12073882B2Publication Date: 2024-08-27
- Inventor: Masaru Yano
- Applicant: Winbond Electronics Corp.
- Applicant Address: TW Taichung
- Assignee: Winbond Electronics Corp.
- Current Assignee: Winbond Electronics Corp.
- Current Assignee Address: TW Taichung
- Agency: JCIPRNET
- Priority: JP 21195124 2021.12.01
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00

Abstract:
A semiconductor memory device capable of automatically restoring writing interrupted due to a momentary stop or a fluctuation of a power supply voltage is provided. A non-volatile memory of the disclosure includes a memory cell array formed with a NOR array and a variable resistance array. When the power supply voltage drops to a power-off level during writing into the NOR array, a reading/writing control unit writes unwritten data into the variable resistance array. Subsequently, when a power-on of the power supply voltage is detected, the reading/writing control unit reads the unwritten data from the variable resistance array and writes the unwritten data into the NOR array, so that interrupted writing is restored.
Public/Granted literature
- US20230170021A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2023-06-01
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