A semiconductor device includes memory cells, word lines, a row address decoder, word line drivers, a first switch transistor, and second switch transistors. The switch transistor is provided between the word line drivers and a power supply potential terminal. Each second switch transistor is provided between each word line and a reference potential terminal. The row address decoder activates all of decode signals corresponding to the memory cells to which a burn-in test is performed collectively. The first switch transistor has a lower driving capability than a total driving capability of two P-channel MOS transistors included in inverters of two word line drivers. Each second switch transistor has a lower driving capability than a driving capability of an N-channel MOS transistor included in the inverter of each word line driver.