发明授权
- 专利标题: Plasma source having a dielectric plasma chamber with improved plasma resistance
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申请号: US17237913申请日: 2021-04-22
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公开(公告)号: US12075554B2公开(公告)日: 2024-08-27
- 发明人: Xing Chen , Ilya Pokidov , Atul Gupta
- 申请人: MKS Instruments, Inc.
- 申请人地址: US MA Andover
- 专利权人: MKS Instruments, Inc.
- 当前专利权人: MKS Instruments, Inc.
- 当前专利权人地址: US MA Andover
- 代理机构: Cesari and McKenna, LLP
- 主分类号: H05H1/46
- IPC分类号: H05H1/46 ; H01J37/32
摘要:
A plasma chamber of a plasma processing system is provided. The plasma chamber defines a plasma channel having a first side and a second side oppositely disposed along a length of the plasma channel. The plasma chamber comprises a first section and a second section constructed from a dielectric material and an interface that bonds together the first and second sections at between a first flange of the first section and a third flange of the second section and between a second flange of the first section and a fourth flange of the second section.
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