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公开(公告)号：US11114287B2
公开(公告)日：2021-09-07
申请号：US16438827
申请日：2019-06-12
发明人： Michael Harris , Chiu-Ying Tai , Atul Gupta
摘要： The present application discloses a device for radical monitoring a plasma source for a remote plasma source used in a processing system and includes at least one gas source, a plasma source body having at least one passage having at least one passage surface, a first thermal sensor receiver may be formed within the plasma source body proximate to the passage surface of the passage, a first thermal sensor positioned within the first thermal sensor receiver configured to measure a first temperature of the passage surface, a second thermal sensor receiver formed within the plasma source body proximate to the passage surface of the passage and configured to measure a second temperature of the passage surface of the passage at a second location.
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公开(公告)号：US20210243876A1
公开(公告)日：2021-08-05
申请号：US17237913
申请日：2021-04-22
发明人： Xing Chen , Ilya Pokidov , Atul Gupta
摘要： A plasma chamber of a plasma processing system is provided. The plasma chamber defines a plasma channel having a first side and a second side oppositely disposed along a length of the plasma channel. The plasma chamber comprises a first section and a second section constructed from a dielectric material and an interface that bonds together the first and second sections at between a first flange of the first section and a third flange of the second section and between a second flange of the first section and a fourth flange of the second section.
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3.发明授权公开(公告)号：US10910798B2
公开(公告)日：2021-02-02
申请号：US16682693
申请日：2019-11-13
发明人： Atul Gupta , Colin Sanford , Joshua Lamontagne , Kevin Wenzel
摘要： An apparatus and method for determining the health of a plasma system by igniting a plasma within a plasma confining volume generate an ignition signal with an ignition circuit and apply the ignition signal between a biased region and a grounded region in the vicinity of the plasma confining volume. A parameter in the ignition circuit is sensed, and the sensed parameter is compared to a first parameter threshold. A condition associated with the plasma confining volume is determined if the sensed parameter differs from the first voltage threshold, and a corrective action can be taken.
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公开(公告)号：US11019715B2
公开(公告)日：2021-05-25
申请号：US16035551
申请日：2018-07-13
发明人： Xing Chen , Ilya Pokidov , Atul Gupta
摘要： A plasma chamber of a plasma processing system is provided. The plasma chamber defines a plasma channel having a first side and a second side oppositely disposed along a length of the plasma channel. The plasma chamber comprises a first section and a second section constructed from a dielectric material and an interface that bonds together the first and second sections at between a first flange of the first section and a third flange of the second section and between a second flange of the first section and a fourth flange of the second section.
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公开(公告)号：US20180195196A1
公开(公告)日：2018-07-12
申请号：US15400635
申请日：2017-01-06
发明人： Chiu-Ying Tai , Atul Gupta , Kevin Wenzel , Glenn Stanton
CPC分类号： C25D11/12 , C23C16/4404 , C25D11/026 , C25D11/06 , C25D11/08 , C25D11/18 , C25D11/26 , C25D11/30 , C25D11/34 , H01J37/32486 , H01J37/32495
摘要： A method is introduced for creating a protective oxide layer over a surface of a metallic structure for use in a semiconductor processing system. The method includes providing the metallic structure, anodizing the surface of the metallic structure to form an anodization layer on the surface, and converting, using a plasma electrolytic oxidation process, at least a portion of the anodization layer to form the protective oxide layer.
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公开(公告)号：US12075554B2
公开(公告)日：2024-08-27
申请号：US17237913
申请日：2021-04-22
发明人： Xing Chen , Ilya Pokidov , Atul Gupta
CPC分类号： H05H1/46 , H01J37/321 , H01J37/32357 , H01J37/32467 , H01J37/32522
摘要： A plasma chamber of a plasma processing system is provided. The plasma chamber defines a plasma channel having a first side and a second side oppositely disposed along a length of the plasma channel. The plasma chamber comprises a first section and a second section constructed from a dielectric material and an interface that bonds together the first and second sections at between a first flange of the first section and a third flange of the second section and between a second flange of the first section and a fourth flange of the second section.
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公开(公告)号：US20200022246A1
公开(公告)日：2020-01-16
申请号：US16035551
申请日：2018-07-13
发明人： Xing Chen , Ilya Pokidov , Atul Gupta
摘要： A plasma chamber of a plasma processing system is provided. The plasma chamber defines a plasma channel having a first side and a second side oppositely disposed along a length of the plasma channel. The plasma chamber comprises a first section and a second section constructed from a dielectric material and an interface that bonds together the first and second sections at between a first flange of the first section and a third flange of the second section and between a second flange of the first section and a fourth flange of the second section.
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8.发明申请公开(公告)号：US20190089135A1
公开(公告)日：2019-03-21
申请号：US15705643
申请日：2017-09-15
发明人： Atul Gupta , Colin Sanford , Joshua Lamontagne , Kevin Wenzel
摘要： An apparatus and method for determining the health of a plasma system by igniting a plasma within a plasma confining volume generate an ignition signal with an ignition circuit and apply the ignition signal between a biased region and a grounded region in the vicinity of the plasma confining volume. A parameter in the ignition circuit is sensed, and the sensed parameter is compared to a first parameter threshold. A condition associated with the plasma confining volume is determined if the sensed parameter differs from the first voltage threshold, and a corrective action can be taken.
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9.发明申请公开(公告)号：US20200099199A1
公开(公告)日：2020-03-26
申请号：US16682693
申请日：2019-11-13
发明人： Atul Gupta , Colin Sanford , Joshua Lamontagne , Kevin Wenzel
摘要： An apparatus and method for determining the health of a plasma system by igniting a plasma within a plasma confining volume generate an ignition signal with an ignition circuit and apply the ignition signal between a biased region and a grounded region in the vicinity of the plasma confining volume. A parameter in the ignition circuit is sensed, and the sensed parameter is compared to a first parameter threshold. A condition associated with the plasma confining volume is determined if the sensed parameter differs from the first voltage threshold, and a corrective action can be taken.
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公开(公告)号：US20190385829A1
公开(公告)日：2019-12-19
申请号：US16438827
申请日：2019-06-12
发明人： Michael Harris , Chiu-Ying Tai , Atul Gupta
IPC分类号： H01J37/32
摘要： The present application discloses a device for radical monitoring a plasma source for a remote plasma source used in a processing system and includes at least one gas source, a plasma source body having at least one passage having at least one passage surface, a first thermal sensor receiver may be formed within the plasma source body proximate to the passage surface of the passage, a first thermal sensor positioned within the first thermal sensor receiver configured to measure a first temperature of the passage surface, a second thermal sensor receiver formed within the plasma source body proximate to the passage surface of the passage and configured to measure a second temperature of the passage surface of the passage at a second location.
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