- Patent Title: Synthetic antiferromagnet, magnetic tunneling junction device including the synthetic antiferromagnet, and memory device including the magnetic tunneling junction device
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Application No.: US17847099Application Date: 2022-06-22
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Publication No.: US12080459B2Publication Date: 2024-09-03
- Inventor: Jeongchun Ryu , Seungjae Lee , Naoki Hase , Kwangseok Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20210190394 2021.12.28 KR 20220073057 2022.06.15
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01F10/32 ; H10B61/00 ; H10N50/10 ; H10N50/85

Abstract:
A synthetic antiferromagnet includes a first ferromagnetic layer having a first surface; a second ferromagnetic layer having a second surface facing the first surface of the first ferromagnetic layer; and a first non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the first ferromagnetic layer has an inclined perpendicular magnetic anisotropy (PMA) in which a magnetization direction of the first ferromagnetic layer is inclined from a first direction perpendicular to the first surface and the second surface, a component in a first direction of the magnetization direction of the first ferromagnetic layer and a component in a first direction of a magnetization direction of the second ferromagnetic layer are opposite to each other.
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