Invention Grant
- Patent Title: Global shutter sensor systems and related methods
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Application No.: US17029682Application Date: 2020-09-23
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Publication No.: US12080739B2Publication Date: 2024-09-03
- Inventor: Manuel H. Innocent , Tomas Geurts , David T. Price
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Scottsdale
- Agency: Adam R. Stephenson, LTD.
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
Implementations of a semiconductor device may include a photodiode included in a second epitaxial layer of a semiconductor substrate; light shield coupled over the photodiode; and a first epitaxial layer located in one or more openings in the light shield. The first epitaxial layer and the second epitaxial layer may form a single crystal.
Public/Granted literature
- US20220093667A1 GLOBAL SHUTTER SENSOR SYSTEMS AND RELATED METHODS Public/Granted day:2022-03-24
Information query
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