A substrate processing method includes performing a developing processing on a substrate. The developing processing includes supplying a developing liquid on a surface of the substrate to form a liquid film of the developing liquid on the surface of the substrate; maintaining the liquid film on the surface such that development progresses; and performing, during the maintaining of the liquid film, a first processing of supplying a gas to an inner region located inward of a peripheral region on the surface of the substrate and a second processing of supplying an adjusting liquid configured to suppress progress of the development on the peripheral region to adjust a degree of the development between the peripheral region and the inner region. The second processing is started after a start time of the first processing, and the second processing is ended after an end time of the first processing.